Chemical vapor deposition of rough-morphology silicon films over a broad temperature range
نویسندگان
چکیده
Growth of rough polycrystalline silicon films has been achieved on SiO, surfaces over a broad temperature range () 100 “C!) using SiH, chemical vapor deposition at low pressures (mTorr range), with smaller grain structure and roughness length scale achieved at lower temperatures. Rough morphology over a broad temperature range is attributed to the combination of nucleation-controlled initial growth (on Si02) and domination of growth by surface reaction (cf. gas phase).
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